DocumentCode :
753159
Title :
Investigation of drain-line loss and the S22 kink effect in capacitively coupled distributed amplifiers
Author :
Shohat, Josef ; Robertson, Ian D. ; Nightingale, Steve J.
Author_Institution :
Sch. of Electron. & Electr. Eng., Univ. of Leeds, UK
Volume :
53
Issue :
12
fYear :
2005
Firstpage :
3767
Lastpage :
3773
Abstract :
This paper investigates the practical limits of the capacitively coupled distributed amplifier (DA) in terms of common-source output impedance. It is shown that the output impedance of the common-source device is considerably affected by the input coupling circuit. The S22 kink effect is more pronounced in the case of the capacitively coupled circuit. The effect on drain-line loss is very marked, and becomes the practical limitation of the technique. The effect is clearly illustrated by practical measurements on a 45-MHz-20-GHz GaAs monolithic-microwave integrated-circuit amplifier. The kink effect is also shown to be relevant to the output impedance and stability of the common-gate stage in the cascode DA topology.
Keywords :
III-V semiconductors; MMIC amplifiers; UHF amplifiers; VHF amplifiers; distributed amplifiers; gallium arsenide; 45 MHz to 20 GHz; GaAs; capacitively coupled circuit; capacitively coupled distributed amplifier; cascode DA topology; common-source output impedance; distributed parameter circuit; drain-line loss; high electron-mobility transistor; kink effect; monolithic-microwave integrated circuit amplifier; Capacitance; Coupling circuits; Design automation; Distributed amplifiers; Gallium arsenide; HEMTs; Impedance; Integrated circuit measurements; MODFETs; Performance analysis; Distributed amplifiers (DAs); distributed parameter circuits; high electron-mobility transistor (HEMT); monolithic-microwave integrated-circuit (MMIC) amplifiers;
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/TMTT.2005.859873
Filename :
1550026
Link To Document :
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