Proton induced upsets in the low altitude polar orbit

Author

Adams, Leonard ; Harboe-Sorensen, Reno ; Daly, Eamon ; Ward, Jeff

Author_Institution

ESA, Noordwijk, Netherlands

Volume

36

Issue

6

fYear

1989

fDate

12/1/1989 12:00:00 AM

Firstpage

2339

Lastpage

2343

Abstract

The authors report on observations of single-event upsets occurring in large dynamic NMOS and static CMOS memories onboard the low-altitude, polar orbiting UOSAT-2 satellite. The strong localization of these upsets to the South Atlantic region leads to the conclusion that the majority of upsets in these devices are caused by nuclear reactions involving energetic radiation-belt protons encountered in the South Atlantic anomaly. The dynamic RAM upset rates are in agreement with the predictions of W.L. Bendel and E.L. Peterson (1983). Static CMOS RAMs are also found to be sensitive to proton-induced upsets, but presently there are not enough ground test data to make predictions

Keywords

CMOS integrated circuits; MOS integrated circuits; aerospace instrumentation; artificial satellites; environmental testing; integrated circuit testing; integrated memory circuits; proton effects; radiation hardening (electronics); random-access storage; CMOS SRAM; NMOS DRAM; SAA; South Atlantic anomaly; South Atlantic region; UOSAT-2 satellite; dynamic NMOS; dynamic RAM; energetic radiation-belt protons; ground test data; low altitude polar orbit; nuclear reactions; observations; proton-induced upsets; single-event upsets; static CMOS memories; upset rates; Computerized monitoring; Hardware; MOS devices; Microprocessors; Proton effects; Random access memory; Read-write memory; Satellites; Single event upset; Space technology;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.45445

Filename

45445