Title :
Proton induced upsets in the low altitude polar orbit
Author :
Adams, Leonard ; Harboe-Sorensen, Reno ; Daly, Eamon ; Ward, Jeff
Author_Institution :
ESA, Noordwijk, Netherlands
fDate :
12/1/1989 12:00:00 AM
Abstract :
The authors report on observations of single-event upsets occurring in large dynamic NMOS and static CMOS memories onboard the low-altitude, polar orbiting UOSAT-2 satellite. The strong localization of these upsets to the South Atlantic region leads to the conclusion that the majority of upsets in these devices are caused by nuclear reactions involving energetic radiation-belt protons encountered in the South Atlantic anomaly. The dynamic RAM upset rates are in agreement with the predictions of W.L. Bendel and E.L. Peterson (1983). Static CMOS RAMs are also found to be sensitive to proton-induced upsets, but presently there are not enough ground test data to make predictions
Keywords :
CMOS integrated circuits; MOS integrated circuits; aerospace instrumentation; artificial satellites; environmental testing; integrated circuit testing; integrated memory circuits; proton effects; radiation hardening (electronics); random-access storage; CMOS SRAM; NMOS DRAM; SAA; South Atlantic anomaly; South Atlantic region; UOSAT-2 satellite; dynamic NMOS; dynamic RAM; energetic radiation-belt protons; ground test data; low altitude polar orbit; nuclear reactions; observations; proton-induced upsets; single-event upsets; static CMOS memories; upset rates; Computerized monitoring; Hardware; MOS devices; Microprocessors; Proton effects; Random access memory; Read-write memory; Satellites; Single event upset; Space technology;
Journal_Title :
Nuclear Science, IEEE Transactions on
