DocumentCode :
753308
Title :
Spatial and temporal variation of the ion flux impinging on the wafer surface in presence of a plasma instability
Author :
Kim, Tae Won ; Aydil, Eray S.
Author_Institution :
Dept. of Chem. Eng., California Univ., Santa Barbara, CA, USA
Volume :
30
Issue :
1
fYear :
2002
fDate :
2/1/2002 12:00:00 AM
Firstpage :
120
Lastpage :
121
Abstract :
An array of planar Langmuir probes built on the surface of a 75-mm diameter Si wafer was used to measure the spatial and temporal variation of the ion flux impinging on the wafer surface in presence of a plasma instability
Keywords :
Langmuir probes; plasma instability; plasma materials processing; Si wafer; ion flux impinging; planar Langmuir probes; plasma instability; spatial variation; temporal variation; wafer surface; Coils; Etching; Inductors; Plasma applications; Plasma density; Plasma displays; Plasma materials processing; Plasma measurements; Plasma stability; Probes;
fLanguage :
English
Journal_Title :
Plasma Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0093-3813
Type :
jour
DOI :
10.1109/TPS.2002.1003953
Filename :
1003953
Link To Document :
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