Design and evaluation of an optically triggered monolithic sample and hold circuit using GaAs MESFET technology

Author

Mason, Richard ; Taylor, John

Author_Institution

Dept. of Electron. & Electr. Eng., Univ. Coll. London, UK

Volume

13

Issue

3

fYear

1995

fDate

3/1/1995 12:00:00 AM

Firstpage

422

Lastpage

429

Abstract

The design and evaluation of an optically triggered, fully integrated sample and hold circuit (OS/H) is described. Measured results are presented that demonstrate operation of this circuit at 250 Ms/s and with effective resolution approaching 8 bits. The integrated circuit, which measures 2.1 mm×1.4 mm, is realized in -1.0-V threshold, 20-GHz ft GaAs MESFET technology, consumes approximately 200 mW of power, and requires one optical address. The OS/H will find applications in high precision, hybrid, and integrated signal processing systems where high speed, high levels of parallelism, and low timing jitter are important. Measured results of a series photoconducting (Auston switch) OS/H realized in the same technology are presented for comparison purposes

Keywords

III-V semiconductors; MESFET integrated circuits; gallium arsenide; integrated circuit design; integrated optoelectronics; jitter; optical design techniques; optical information processing; sample and hold circuits; 1 V; 1.4 mm; 2.1 mm; 200 mW; GaAs; GaAs MESFET technology; effective resolution; high speed; integrated optical circuit; integrated optoelectronics; integrated signal processing systems; low timing jitter; optical address; optically triggered monolithic sample and hold circuit; Gallium arsenide; High speed optical techniques; Integrated circuit measurements; Integrated optics; MESFET integrated circuits; Optical design; Optical signal processing; Photonic integrated circuits; Power measurement; Signal resolution;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/50.372437

Filename

372437