DocumentCode :
753405
Title :
Surface Relief Versus Standard VCSELs: A Comparison Between Experimental and Hot-Cavity Model Results
Author :
Debernardi, Pierluigi ; Kroner, Andrea ; Rinaldi, Fernando ; Michalzik, Rainer
Author_Institution :
Ist. di Elettron. e di Ing. dell´´Inf. e delle Telecomun., Politec. di Torino, Torino
Volume :
15
Issue :
3
fYear :
2009
Firstpage :
828
Lastpage :
837
Abstract :
We present a detailed experimental as well as theoretical study of vertical-cavity surface-emitting lasers (VCSELs) with and without etched surface modifications. The so-called inverted surface relief leads to a suppression of higher-order transverse modes, where measurements of output power and optical spectra show a maximum single-mode output power of 6.1 mW. For simulations, a hot-cavity model is applied, which can handle the complex electrical, thermal, and electromagnetic problems in a VCSEL structure in a fully 3-D manner. The optical characteristics of both structures, including current-dependent output power and spectral properties up to thermal rollover, are very well reproduced by the simulations. Furthermore, the evolution of the beam profile is investigated by simulations as well as spectrally resolved near-field measurements at various distances to the laser surface. Here, the simulations confirm the significantly stronger thermal guiding in the relief device indicated in the measurements.
Keywords :
laser beams; laser cavity resonators; laser modes; laser variables measurement; semiconductor device models; spectral analysis; surface emitting lasers; VCSELs; etched surface modification; higher-order transverse mode; hot-cavity model; optical spectra; power 6.1 mW; power measurement; spectrally resolved near-field measurement; thermal rollover property; vertical-cavity surface-emitting laser; Optical near-field; VCSEL; semiconductor laser modeling; surface relief; thermal model; vertical-cavity surface-emitting laser;
fLanguage :
English
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
1077-260X
Type :
jour
DOI :
10.1109/JSTQE.2009.2015152
Filename :
4840488
Link To Document :
بازگشت