Title :
Detrimental effect of impact ionization in the absorption region on the frequency response and excess noise performance of InGaAs-InAlAs SACM avalanche photodiodes
Author :
Duan, Ning ; Wang, S. ; Zheng, X.G. ; Li, X. ; Ning Li ; Campbell, Joe C. ; Chad Wang ; Coldren, Larry A.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Texas, Austin, TX, USA
fDate :
4/1/2005 12:00:00 AM
Abstract :
It is shown that optimization of the electric field profile in the absorption region of separate absorption, charge, and multiplication InGaAs-InAlAs avalanche photodiodes is critical to achieve low excess noise and high gain bandwidth product.
Keywords :
III-V semiconductors; aluminium compounds; avalanche photodiodes; gallium arsenide; impact ionisation; indium compounds; semiconductor device noise; InGaAs-InAlAs; InGaAs-InAlAs SACM avalanche photodiode excess noise; electric field profile optimization; gain bandwidth product; impact ionization; separate-absorption-charge-multiplication; Absorption; Avalanche photodiodes; Bandwidth; Frequency response; Impact ionization; Indium compounds; Indium gallium arsenide; Indium phosphide; Optical noise; Silicon; Avalanche photodiodes (APDs); excess noise factor; impact ionization; photodetectors;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.2005.843613
