DocumentCode :
753577
Title :
Enhanced wavelength tunability in asymmetric gain-levered quantum-well semiconductor lasers
Author :
Yee, W.M. ; Shore, K.A.
Author_Institution :
Sch. of Electron. & Electr. Eng., Bath Univ., UK
Volume :
13
Issue :
4
fYear :
1995
fDate :
4/1/1995 12:00:00 AM
Firstpage :
588
Lastpage :
591
Abstract :
The wavelength tuning characteristics of two-section gain-levered Fabry-Perot quantum well laser diodes with unequal (asymmetric) facet reflectivities are investigated theoretically, taking into account the longitudinal variations of carrier and photon densities. It is demonstrated that, under appropriate biasing conditions, enhancement of wavelength tunability can be achieved in asymmetric Fabry-Perot laser diodes
Keywords :
Fabry-Perot resonators; carrier density; laser cavity resonators; laser theory; laser tuning; quantum well lasers; reflectivity; appropriate biasing conditions; asymmetric Fabry-Perot laser diodes; asymmetric gain-levered quantum-well semiconductor lasers; carrier densities; enhanced wavelength tunability; longitudinal variations; photon densities; two-section gain-levered Fabry-Perot quantum well laser diodes; unequal asymmetric facet reflectivities; wavelength tunability; wavelength tuning characteristics; Charge carrier density; Diode lasers; Fabry-Perot; Laser modes; Laser tuning; Optical transmitters; Quantum well lasers; Reflectivity; Semiconductor lasers; Tunable circuits and devices;
fLanguage :
English
Journal_Title :
Lightwave Technology, Journal of
Publisher :
ieee
ISSN :
0733-8724
Type :
jour
DOI :
10.1109/50.372470
Filename :
372470
Link To Document :
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