Enhanced wavelength tunability in asymmetric gain-levered quantum-well semiconductor lasers

Author

Yee, W.M. ; Shore, K.A.

Author_Institution

Sch. of Electron. & Electr. Eng., Bath Univ., UK

Volume

13

Issue

4

fYear

1995

fDate

4/1/1995 12:00:00 AM

Firstpage

588

Lastpage

591

Abstract

The wavelength tuning characteristics of two-section gain-levered Fabry-Perot quantum well laser diodes with unequal (asymmetric) facet reflectivities are investigated theoretically, taking into account the longitudinal variations of carrier and photon densities. It is demonstrated that, under appropriate biasing conditions, enhancement of wavelength tunability can be achieved in asymmetric Fabry-Perot laser diodes

Keywords

Fabry-Perot resonators; carrier density; laser cavity resonators; laser theory; laser tuning; quantum well lasers; reflectivity; appropriate biasing conditions; asymmetric Fabry-Perot laser diodes; asymmetric gain-levered quantum-well semiconductor lasers; carrier densities; enhanced wavelength tunability; longitudinal variations; photon densities; two-section gain-levered Fabry-Perot quantum well laser diodes; unequal asymmetric facet reflectivities; wavelength tunability; wavelength tuning characteristics; Charge carrier density; Diode lasers; Fabry-Perot; Laser modes; Laser tuning; Optical transmitters; Quantum well lasers; Reflectivity; Semiconductor lasers; Tunable circuits and devices;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/50.372470

Filename

372470