A new process of fabricating inverted-staggered tri-layer thin-film transistors

Author

Lin, Wen-Jian ; Tsai, Hsiung-Kuang

Author_Institution

Electron. Res. & Servive Organ., Ind. Technol. Res. Inst., Hsinchu, Taiwan

Volume

16

Issue

4

fYear

1995

fDate

4/1/1995 12:00:00 AM

Firstpage

133

Lastpage

135

Abstract

A new method of fabricating a-Si:H TFT with etching-stop structure has been proposed. Only one plasma-enhanced chemical vapor deposition is required in this new method and a PH/sub 3//H/sub 2/ plasma treatment during the deposition has been used to form the TFT contact and thus saved another plasma deposition. With this method, a TFT of 500 /spl Aring/ active layer has been fabricated successfully. The drain current and saturation mobility of this device is 2.4/spl times/10/sup -7/ A and 0.1 cm/sup 2//V sec, respectively, which is comparable to the conventional fabricating method. The plasma treatment will also form an additional leakage path on the TFT top surface and increase the TFT subthreshold slope. However, a current of less than 1 pA at V/sub G/=-2.4 V can still be obtained. The possible mechanism of the contact formation by the plasma treatment is also discussed.<>

Keywords

amorphous semiconductors; carrier mobility; elemental semiconductors; hydrogen; plasma CVD; semiconductor technology; silicon; thin film transistors; -2.4 V; 1 pA; 500 angstrom; Si:H; drain current; etching-stop structure; inverted-staggered tri-layer thin-film transistors; leakage path; plasma treatment; plasma-enhanced chemical vapor deposition; saturation mobility; subthreshold slope; Amorphous silicon; Chemicals; Costs; Etching; Plasma applications; Plasma chemistry; Plasma devices; Plasma displays; Surface treatment; Thin film transistors;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.372492

Filename

372492