Temperature dependence study of two-dimensional electron gas effect on the noise performance of high frequency field effect transistors

Author

Feng, M. ; Scherrer, D. ; Kruse, J. ; Apostolakis, P.J. ; Middleton, J.R.

Author_Institution

Center for Compound Semicond. Microelectron., Illinois Univ., Urbana, IL, USA

Volume

16

Issue

4

fYear

1995

fDate

4/1/1995 12:00:00 AM

Firstpage

139

Lastpage

141

Abstract

We present experimental evidence that the noise figure (NF) and associated gain equal to those achieved with GaAs pseudomorphic high electron mobility transistors (GaAs p-HEMT´s) can also be accomplished by ion implanted GaAs metal-semiconductor field-effect transistors (GaAs MESFET´s). These measured noise figure results as a function of low temperature for GaAs MESFET´s and p-HEMT´s clearly suggest that the transport properties of the two-dimensional electron gas in HEMT´s and p-HEMT´s do not make a significant contribution to the noise reduction at high frequency operation of these devices.<>

Keywords

III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; high electron mobility transistors; ion implantation; microwave field effect transistors; semiconductor device noise; two-dimensional electron gas; 2DEG; GaAs; PHEMT; field effect transistors; high electron mobility transistors; high frequency operation; ion implanted MESFET; noise performance; pseudomorphic HEMT; temperature dependence study; transport properties; two-dimensional electron gas; Electron mobility; FETs; Gallium arsenide; HEMTs; MESFETs; MODFETs; Noise figure; Noise measurement; PHEMTs; Temperature dependence;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.372494

Filename

372494