DocumentCode
753768
Title
Measurement of I-V curves of silicon-on-insulator (SOI) MOSFET´s without self-heating
Author
Jenkins, K.A. ; Sun, J.Y.-C.
Author_Institution
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Volume
16
Issue
4
fYear
1995
fDate
4/1/1995 12:00:00 AM
Firstpage
145
Lastpage
147
Abstract
A new method for measuring the output (I/sub D/-V/sub D/) characteristics of SOI MOSFET´s without self-heating is described. The method uses short pulses with a low repetition rate, and a reverse transient loadline construction. The technique is demonstrated by measuring 0.25 μm bulk and SOI MOSFET´s with 5-nm gate oxide. Application of the method to the extraction of device temperature as a function of DC power is also illustrated.
Keywords
MOSFET; semiconductor device testing; silicon-on-insulator; DC power; I-V curves; SOI MOSFET; Si; device temperature; low repetition rate; output characteristics; reverse transient loadline construction; self-heating; short pulses; Equivalent circuits; MOSFET circuits; Oscilloscopes; Power system transients; Pulse generation; Pulse measurements; Silicon on insulator technology; Temperature measurement; Time measurement; Voltage measurement;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.372496
Filename
372496
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