Title :
High performance 1.28 μm GaInNAs double quantum well lasers
Author :
Wei, Y.-Q. ; Sadeghi, M. ; Wang, S.M. ; Modh, P. ; Larsson, A.
Author_Institution :
Dept. of Microtechnol. & Nanosci., Chalmers Univ. of Technol., Goteborg, Sweden
Abstract :
The use of multiple quantum wells and GaAs barriers favours the temperature stability and modulation bandwidth of GaInNAs lasers. It is shown that a very low threshold current density and a high characteristic temperature can be achieved for GaInNAs/GaAs double quantum well lasers, emitting at 1.28 μm, when grown by molecular beam epitaxy under favourable conditions.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; molecular beam epitaxial growth; quantum well lasers; semiconductor laser arrays; 1.28 micron; GaInNAs-GaAs; characteristic temperature; double quantum well lasers; modulation bandwidth; molecular beam epitaxy; multiple quantum wells; temperature stability; threshold current density;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20053210
