High-performance InP/In/sub 0.53/Ga/sub 0.47/As/InP double HBTs on GaAs substrates

Author

Kim, Y.M. ; Dahlstrom, M. ; Lee, S. ; Rodwell, M.J.W. ; Gossard, A.C.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

Volume

23

Issue

6

fYear

2002

fDate

6/1/2002 12:00:00 AM

Firstpage

297

Lastpage

299

Abstract

InP/In/sub 0.53/Ga/sub 0.47/As/InP double heterojunction bipolar transistors (HBTs) were grown on GaAs substrates. A 140 GHz power-gain cutoff frequency f/sub max/ and a 207 GHz current-gain cutoff frequency f/sub /spl tau// were obtained, presently the highest reported values for metamorphic HBTs. The breakdown voltage BV/sub CEO/ was 5.5 V, while the dc current gain /spl beta/ was 76. High-thermal-conductivity InP metamorphic buffer layers were employed in order to minimize the device-thermal resistance.

Keywords

III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor device breakdown; thermal conductivity; thermal resistance; 140 GHz; 207 GHz; 5.5 V; DC current gain; GaAs; GaAs substrate; InP metamorphic buffer layer; InP-In/sub 0.53/Ga/sub 0.47/As-InP; InP/In/sub 0.53/Ga/sub 0.47/As/InP double heterojunction bipolar transistor; breakdown voltage; current-gain cutoff frequency; metamorphic HBT; power-gain cutoff frequency; thermal conductivity; thermal resistance; Cutoff frequency; Double heterojunction bipolar transistors; Electrical resistance measurement; Gallium arsenide; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Substrates; Thermal resistance;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2002.1004214

Filename

1004214