Title :
Bend loss attenuator by carrier injection in InGaAsP/InP
Author :
Ng, S. ; Abdalla, S. ; Barrios, P. ; Delâge, A. ; Janz, S. ; McKinnon, R. ; Syrett, B.
Author_Institution :
Dept. of Electron., Carleton Univ., Ont., Canada
Abstract :
A compact InGaAsP/InP waveguide bend loss attenuator with electrically modulated bend loss is demonstrated. The carrier injection device exhibits better than 15 dB modulation and <20 ns response time. The bend loss attenuator requires less than half the current of a comparable straight waveguide attenuator to achieve 3 dB attenuation.
Keywords :
III-V semiconductors; charge injection; gallium arsenide; indium compounds; optical attenuators; optical waveguide components; waveguide attenuators; III-V semiconductors; InGaAsP-InP; carrier injection device; chemical vapour deposition; waveguide bend loss attenuator;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20053357
