• DocumentCode
    754152
  • Title

    Gate-all-around MOSFETs: lateral ultra-narrow (≤10 nm) fin as channel body

  • Author

    Singh, N. ; Agarwal, A. ; Bera, L.K. ; Kumar, R. ; Lo, G.Q. ; Narayanan, B. ; Kwong, D.L.

  • Author_Institution
    Inst. of Microelectron., Singapore
  • Volume
    41
  • Issue
    24
  • fYear
    2005
  • Firstpage
    1353
  • Lastpage
    1354
  • Abstract
    The fabrication of lateral ultra-narrow fin body (thickness ≤10 nm) gate-all-around MOSFETs, which exhibit excellent gate electrostatic control over the channel, is presented. The narrow fins were formed using alternating phase DUV lithography and low temperature oxidation of Si. The device characteristics are completely free from substrate bias effects.
  • Keywords
    MOSFET; silicon; ultraviolet lithography; DUV lithography; Si; gate electrostatic control; gate-all-around MOSFET; lateral ultra-narrow fin body; low temperature oxidation; substrate bias effect;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20053195
  • Filename
    1550132
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=754152