Title :
Suppressing phosphorus diffusion in germanium by carbon incorporation
Author :
Luo, G. ; Cheng, C.C. ; Huang, C.-Y. ; Hsu, S.-L. ; Chien, C.H. ; Ni, W.X. ; Chang, C.Y.
Author_Institution :
Nat. Nano Device Labs., Taiwan, Taiwan
Abstract :
A problem in the Ge MOSFET process is that the phosphorus for n-type doping in Ge diffuses very fast. It is very difficult to form the shallow source/drain p-n junctions. It is reported, for the first time, that the phosphorus diffusion in Ge during activation (or annealing) can be suppressed effectively owing to carbon incorporation.
Keywords :
MOSFET; annealing; carbon; elemental semiconductors; germanium; p-n junctions; phosphorus; semiconductor doping; Ge MOSFET process; Ge:P; annealing; carbon incorporation; phosphorus diffusion suppression;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20052999
