Title :
One transistor ferroelectric memory with Pt/Pb5Ge3O/sub 11//Ir/poly-Si/SiO2/Si gate-stack
Author :
Tingkai Li ; Sheng Teng Hsu ; Ulrich, B.D. ; Stecker, L. ; Evans, D.R. ; Lee, J.J.
Author_Institution :
Sharp Labs. of America, Inc, Camas, WA, USA
fDate :
6/1/2002 12:00:00 AM
Abstract :
One transistor ferroelectric nonvolatile memory with gate stack of Pt/Pb5Ge3O/sub 11//lr/poly-Si/SiO2/Si was successfully fabricated. This device features a saturated memory window of 3 V at a programming voltage of higher than 3 V from C-V and I-V measurements. The memory window decays rapidly within 10 seconds after programming, but remains stable at 1 V for up to 100 h. The "on" and "off" state currents are greater than 10 μA/μm and less 0.01 pA/μm, respectively, at a drain voltage of 0.1 V.
Keywords :
ferroelectric capacitors; ferroelectric storage; iridium; lead compounds; platinum; silicon; silicon compounds; 1 V; 100 h; 3 V; MOCVD; Pt-Pb/sub 5/Ge/sub 3/O/sub 11/-Ir-Si-SiO/sub 2/-Si; Pt/Pb/sub 5/Ge/sub 3/O/sub 11//Ir/poly-Si/SiO/sub 2//Si gate-stack; ferroelectric nonvolatile memory; metal-ferroelectric-metal capacitor; metal-ferroelectric-metal-polysilicon-oxide-Si memory cell structure; one transistor ferroelectric memory; programming voltage; saturated memory window; Capacitors; Electrodes; Etching; FETs; Ferroelectric materials; High-K gate dielectrics; MOCVD; Nonvolatile memory; Silicon; Voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2002.1004228
