Analytical quantum mechanical model for accumulation capacitance of MOS structures

Author

Saito, Shin-ichi ; Torii, Kazuyoshi ; Hiratani, Masahiko ; Onai, Takahiro

Author_Institution

Central Res. Lab., Hitachi Ltd., Tokyo, Japan

Volume

23

Issue

6

fYear

2002

fDate

6/1/2002 12:00:00 AM

Firstpage

348

Lastpage

350

Abstract

We propose a new analytical model to quantitatively simulate capacitance-voltage (C-V) characteristics under accumulation conditions in metal-oxide-semiconductor structures. Based on the exponential potential, we have obtained the exact solution of the Schrodinger equation for all bound states that are consistent with quantum statistics and Gauss´ law. The calculated C-V curves are in good agreement with measured ones by using the proposed model. One can easily obtain the results equivalent to full numerical solutions based on our model.

Keywords

MIS structures; Schrodinger equation; accumulation layers; capacitance; C-V curves; Gauss´ law; MOS structures; Schrodinger equation; accumulation capacitance; accumulation conditions; analytical quantum mechanical model; bound states; capacitance-voltage characteristics; exact solution; exponential potential; metal-oxide-semiconductor structures; quantum statistics; Analytical models; Dielectric measurements; Energy states; Gaussian processes; Numerical simulation; Poisson equations; Quantization; Quantum capacitance; Quantum mechanics; Schrodinger equation;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2002.1004231

Filename

1004231