Electrical properties of Ru-based alloy gate electrodes for dual metal gate Si-CMOS

Author

Misra, Veena ; Zhong, Huicai ; Lazar, Heather

Author_Institution

Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA

Volume

23

Issue

6

fYear

2002

fDate

6/1/2002 12:00:00 AM

Firstpage

354

Lastpage

356

Abstract

In this letter, low resistivity Ru and Ru-Ta alloy films, deposited via reactive sputtering, were evaluated as gate electrodes for p- and n-MOSFET devices, respectively. MOSFETs fabricated via a conventional process flow indicated that the work functions of Ru and Ru-Ta alloys were compatible with p- and n-MOSFET devices, respectively. Both of the metal gated devices eliminated gate depletion effects. Good MOSFET characteristics, such as I/sub DS/-V/sub GS/ and mobility, were obtained for both Ru-gated PMOSFETs and Ru-Ta gated NMOSFETs.

Keywords

CMOS integrated circuits; MOSFET; carrier mobility; electric current; electrodes; integrated circuit interconnections; integrated circuit metallisation; ruthenium; ruthenium alloys; sputter deposition; tantalum alloys; MOSFET characteristics; MOSFET mobility; MOSFET process flow; Ru films; Ru work function; Ru-SiO/sub 2/-Si; Ru-Ta alloy films; Ru-Ta alloy work function; Ru-Ta gated NMOSFETs; Ru-based alloy gate electrodes; Ru-gated PMOSFETs; RuTa-SiO/sub 2/-Si; dual metal gate Si-CMOS; electrical properties; gate depletion effects; gate electrodes; metal gated devices; n-MOSFET devices; p-MOSFET devices; reactive sputtering; resistivity; Conductivity; Dielectric devices; Dielectric substrates; Electrodes; MOS devices; MOSFET circuits; Oxidation; Silicon; Sputtering; Thermal stability;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2002.1004233

Filename

1004233