Title :
Microwave properties of silicon junction tunnel diodes grown by molecular beam epitaxy
Author :
Dashiell, M.W. ; Kolodzey, J. ; Crozat, P. ; Aniel, F. ; Lourtioz, J.M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Delaware Univ., Newark, DE, USA
fDate :
6/1/2002 12:00:00 AM
Abstract :
The bias dependence of the single-port microwave reflection gain of 15 μm-diameter Si Esaki tunnel diodes, grown by molecular beam epitaxy, was studied as a function of frequency. A simple equivalent circuit accurately modeled the data and yielded the forward-bias junction capacitance, which cannot be obtained by conventional low frequency capacitance-voltage techniques. The diodes were highly-doped step p-i-n junctions and exhibited a peak current density of 16 kA/cm2. The microwave reflection gain and cut-off frequency were 12 dB land 1.6 GHz, respectively, with a speed index (slew rate) of 7.1 V/ns.
Keywords :
capacitance; elemental semiconductors; equivalent circuits; heavily doped semiconductors; microwave diodes; molecular beam epitaxial growth; p-i-n diodes; semiconductor device measurement; semiconductor device models; semiconductor growth; silicon; tunnel diodes; 1.6 GHz; 12 dB; 15 micron; Si; Si Esaki tunnel diodes; bias dependence; equivalent circuit; forward-bias junction capacitance; highly-doped step p-i-n junction diodes; low frequency capacitance-voltage techniques; microwave cut-off frequency; microwave measurements; microwave properties; microwave reflection gain; molecular beam epitaxy; peak current density; silicon junction tunnel diodes; single-port microwave reflection gain; slew rate; speed index; Capacitance; Capacitance-voltage characteristics; Equivalent circuits; Frequency; Molecular beam epitaxial growth; Optical reflection; P-i-n diodes; PIN photodiodes; Semiconductor process modeling; Silicon;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2002.1004234
