Improved Emission Efficiency in InGaN Light-Emitting Diodes Using Reverse Bias in Pulsed Voltage Operation

Author

Cho, Jaehee ; Yoon, Euijoon ; Kim, Hyunsoo ; Park, YongJo ; Kwak, Joon Seop

Author_Institution

Dept. of Mater. Sci. & Eng., Seoul Nat. Univ., Seoul

Volume

20

Issue

13

fYear

2008

fDate

7/1/2008 12:00:00 AM

Firstpage

1190

Lastpage

1192

Abstract

Improved emission efficiency in InGaN near-ultraviolet light-emitting diodes (LEDs) was demonstrated using reverse bias in pulsed voltage operation. Pulsed voltage operation of the LEDs from 3 to 3.2 V with a duty cycle of 50% at Hz produced a radiant flux of 4.0 mW, while pulsed operation from 0 to 3.2 V showed a radiant flux of 3.2 mW. The radiant flux further increased as the reverse voltage increased, at the same forward voltage. The improved radiant flux was attributed to uniform carrier redistribution at the multiquantum wells, due to a periodically applied voltage from reverse voltage to forward voltage with a frequency ranged from to Hz, resulting in improved emission efficiency in InGaN LEDs.

Keywords

III-V semiconductors; indium compounds; light emitting diodes; InGaN; light-emitting diode emission; near-ultraviolet light-emitting diode; pulsed voltage operation; radiant flux; voltage 0 V to 3.2 V; Charge carrier processes; Electron emission; Frequency; Light emitting diodes; Materials science and technology; Pulse measurements; Quantum well devices; Radiative recombination; Spontaneous emission; Voltage; GaN; light-emitting diode (LED);

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2008.924893

Filename

4544831