Title :
High-Performance Uni-Traveling-Carrier Photodiodes With a New Collector Design
Author :
Chtioui, M. ; Enard, A. ; Carpentier, D. ; Bernard, S. ; Rousseau, B. ; Lelarge, F. ; Pommereau, F. ; Achouche, M.
Author_Institution :
Alcatel-Thales III-V Lab., Marcoussis
fDate :
7/1/2008 12:00:00 AM
Abstract :
We report two uni-traveling-carrier photodiode (PD) structures, for high-power and high-linearity applications. Using a thick collection layer (500 nm), the fabricated 25-m-diameter PDs achieve a 3-dB bandwidth up to 29 GHz, and a maximum dissipated heat power of about 480 mW, simultaneously. A new collector design with a nonuniform doping profile is proposed to better relax the space charge effect. Its performances are compared to a uniformly doped collector layer. Saturation currents and third-order intermodulation distortion measurements at 20 GHz confirm the advantage of the new collector design for high-power and high-linearity performances: 1-dB saturation current as high as 120 mA and a third-order intercept point in excess of 35 dBm at 70 mA are recorded.
Keywords :
III-V semiconductors; cooling; doping profiles; gallium arsenide; indium compounds; intermodulation distortion; intermodulation measurement; photodiodes; space charge; InGaAs-InP; collector design; current 70 mA; frequency 20 GHz; heat dissipation; nonuniform doping profile; saturation currents; size 25 mum; size 500 nm; space charge effect; third-order intercept point; third-order intermodulation distortion measurements; uni-traveling-carrier photodiodes; uniformly doped collector layer; Bandwidth; Capacitance; Doping profiles; Electrons; Indium phosphide; Intermodulation distortion; Photodiodes; Space charge; Substrates; Thermal resistance; $-$1-dB compression; High-linearity photodiodes (PDs); high-power photodiodes (PDs); third-order intermodulation distortion (IMD3); uni-traveling-carrier photodiode (UTC-PD);
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2008.924651
