DocumentCode :
75446
Title :
Fabrication, Novel Morphology, and Field Emission Properties of 
Core-Shell Nanowires
Author :
Hsu, Cheng-Liang ; Liu, Shin ; Tsai, Tsung-Ying ; Chen, Kuan-Chao
Author_Institution :
Dept. of Electr. Eng., Nat. Univ. of Tainan, Tainan, Taiwan
Volume :
34
Issue :
1
fYear :
2013
fDate :
Jan. 2013
Firstpage :
96
Lastpage :
98
Abstract :
Ga2O3/In2O3 core-shell nanowires (NWs) have a structure in which quadrangular In2O3 nanoflakes surround Ga2O3 NWs. The XRD peak of Ga2O3/In2 O3 core-shell NWs shifts to a higher angle as Ga3+ impurity, which has a smaller radius than In3+, is added. Photoluminescence observations reveal that In2O3 red emission was shifted to infrared by Ga doping. The low-threshold electric field of Ga2O3/In2 O3 core-shell NWs is only 1.9 V/μm, which is enhanced by the nanoscale quadrangular flake morphology.
Keywords :
X-ray diffraction; crystal morphology; field emission; gallium compounds; indium compounds; nanowires; photoluminescence; sputtered coatings; Ga2O3-In2O3; XRD; core-shell nanowire fabrication; core-shell nanowire morphology; field emission properties; nanoscale quadrangular flake morphology; photoluminescence; quadrangular nanoflakes; red emission; Doping; Gold; Impurities; Indium; Nanoscale devices; Nanowires; X-ray scattering; $hbox{Ga}_{2}hbox{O}_{3}$ $hbox{In}_{2}hbox{O}_{3}$
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2012.2222339
Filename :
6361355
Link To Document :
