Title :
Ultralow threshold current vertical-cavity surface-emitting lasers with AlAs oxide-GaAs distributed Bragg reflectors
Author :
MacDougal, M.H. ; Dapkus, P.D. ; Pudikov, V. ; Hanmin Zhao ; Gye Mo Yang
Author_Institution :
Dept. of Electr. Eng.-Electrophys., Univ. of Southern California, Los Angeles, CA, USA
fDate :
3/1/1995 12:00:00 AM
Abstract :
An electrically-pumped, vertical-cavity, surface-emitting laser (VCSEL) using an AlAs oxide-GaAs DBR above the AlGaAs-GaAs-InGaAs gain region and a conventional AlAs-GaAs DBR below is described. By selective oxidation, devices with current flow apertures of different areas are fabricated, and in 8-μm-square devices, threshold currents as low as 0.22 mA are achieved. Being the first electrically-pumped VCSEL to utilize the oxide-based DBR, it demonstrates that the oxide-based DBR is of sufficient quality to realize submilliampere threshold currents.
Keywords :
III-V semiconductors; aluminium compounds; distributed feedback lasers; gallium arsenide; indium compounds; laser cavity resonators; optical fabrication; semiconductor lasers; surface emitting lasers; 0.22 mA; 8 mum; AlAs oxide-GaAs distributed Bragg reflectors; AlGaAs-GaAs-InGaAs; AlGaAs-GaAs-InGaAs gain region; VCSEL; current flow apertures; electrically-pumped; electrically-pumped VCSEL; oxide-based DBR; selective oxidation; submilliampere threshold currents; surface-emitting laser; ultralow threshold current vertical-cavity surface-emitting lasers; vertical-cavity; Distributed Bragg reflectors; Mirrors; Optical fiber testing; Oxidation; Pump lasers; Reflectivity; Resonance; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers;
Journal_Title :
Photonics Technology Letters, IEEE
