Measurement and Modeling of a High-Linearity Modified Uni-Traveling Carrier Photodiode

Author

Beling, Andreas ; Pan, Huapu ; Chen, Hao ; Campbell, Joe C.

Author_Institution

Dept. of Electr. & Comput. Eng., Virginia Univ., Charlottesville, VA

Volume

20

Issue

14

fYear

2008

fDate

7/15/2008 12:00:00 AM

Firstpage

1219

Lastpage

1221

Abstract

The third-order intermodulation distortions of an InGaAs-InP charge compensated modified uni-traveling carrier photodiode (PD) are characterized using a two-tone setup. At 310-MHz modulation frequency, the third-order local intercept point (IP3) reaches 52 dBm and remains above 35 dBm up to 21GHz. Based on experimental results for the dependence of responsivity and PD capacitance on bias voltage and photocurrent, we use a simple equivalent circuit model to simulate the frequency characteristics of the intermodulation distortions.

Keywords

III-V semiconductors; capacitance; charge compensation; equivalent circuits; frequency modulation; gallium arsenide; indium compounds; intermodulation distortion; optical modulation; photoconductivity; photodiodes; bias voltage; capacitance; charge compensated modified uni-traveling carrier photodiode; equivalent circuit model; frequency 21 GHz; modulation frequency; photocurrent; third-order intermodulation distortions; third-order local intercept point; two-tone setup; Distortion measurement; Distributed feedback devices; Equivalent circuits; Frequency modulation; Intermodulation distortion; Linearity; Photoconductivity; Photodiodes; Radio frequency; Voltage; InGaAs; linearity; photodiode (PD); third-order intermodulation distortion (IMD3);

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2008.926016

Filename

4544846