Periodic mode shift in vertical cavities grown by molecular beam epitaxy

Author

Eng, L.E. ; Toh, K. ; Bacher, K. ; Harris, J.S., Jr. ; Chang-Hasnain, C.J.

Author_Institution

Edward L. Ginzton Lab., Stanford Univ., CA, USA

Volume

7

Issue

3

fYear

1995

fDate

3/1/1995 12:00:00 AM

Firstpage

235

Lastpage

237

Abstract

We demonstrate a spatially-chirped resonant wavelength in vertical cavities grown by molecular beam epitaxy (MBE). The wavelength shift is achieved by varying the GaAs growth rate across the wafer using backside temperature patterns. We have demonstrated, for the first time, 8-nm periodic cavity mode shifts in GaAs-AlAs Fabry-Perot vertical cavities. The measured rate of mode shift is 5.3 nm/mm. Patterns transfer with a resolution on the millimeter scale.<>

Keywords

Fabry-Perot resonators; III-V semiconductors; aluminium compounds; gallium arsenide; laser cavity resonators; laser modes; molecular beam epitaxial growth; semiconductor growth; semiconductor laser arrays; semiconductor lasers; GaAs growth rate; GaAs-AlAs; GaAs-AlAs Fabry-Perot vertical cavities; MBE; backside temperature patterns; laser cavity resonators; millimeter scale; mode shift; molecular beam epitaxy; patterns transfer; periodic cavity mode shifts; periodic mode shift; resolution; spatially-chirped resonant wavelength; vertical cavities; wavelength shift; Gallium arsenide; Indium; Molecular beam epitaxial growth; Optical arrays; Substrates; Surface emitting lasers; Temperature; Vertical cavity surface emitting lasers; Wafer bonding; Wavelength division multiplexing;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.372731

Filename

372731