DocumentCode :
75463
Title :
Radiation Effects in Optoelectronic Devices
Author :
Johnston, A.H.
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
Volume :
60
Issue :
3
fYear :
2013
fDate :
Jun-13
Firstpage :
2054
Lastpage :
2073
Abstract :
This review paper discusses radiation effects in a variety of optoelectronic devices. The main emphasis is on displacement and total dose damage under conditions that are representative of various space missions. However, the mechanisms for degradation in space are also applicable to other environments, such as nuclear reactors, and the extremely high-energy particles associated with the Large Hadron Collider at CERN. In addition to permanent damage effects, there is also an abbreviated treatment of single-event effects in optoelectronic devices.
Keywords :
optoelectronic devices; radiation effects; reviews; CERN Large Hadron Collider; displacement damage; optoelectronic devices; radiation effects; space missions; total dose damage; Belts; Earth; Neutrons; Optoelectronic devices; Protons; Silicon; Space vehicles; Detectors; laser diodes; light-emitting diodes; optoelectronics; radiation effects;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2013.2259504
Filename :
6519334
Link To Document :
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