A novel InAlAs/InGaAs two-terminal real-space transfer diode

Author

Su, Jan-Shing ; Hsu, Wei-Chou ; Lin, Yu-Shyan ; Lin, Wei ; Wu, Chang-Luen ; Tsai, Ming-Shang ; Wu, Yu-Huei

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

17

Issue

2

fYear

1996

Firstpage

43

Lastpage

45

Abstract

We report a two-terminal real-space transfer diode (RSTD) using a InAlAs/InGaAs heterojunction grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). By virtue of nonalloyed ohmic contacts as well as a sewer layer which is electrically separated from ohmic electrodes, a carrier density modulation and a strong negative differential resistance can be obtained. A peak-to-valley current ratio up to 140000 (1/spl times/10/sup 6/) at 300 (77) K are, to our knowledge, among the best for InAlAs/InGaAs structures. The proposed device also reveals sharp charge injection and broad valley range.

Keywords

CVD coatings; III-V semiconductors; aluminium compounds; carrier density; gallium arsenide; indium compounds; negative resistance devices; semiconductor diodes; InAlAs-InGaAs; InAlAs/InGaAs heterojunction; carrier density modulation; charge injection; low-pressure metalorganic chemical vapor deposition; negative differential resistance; nonalloyed ohmic contacts; peak-to-valley current ratio; sewer layer; two-terminal real-space transfer diode; Charge carrier density; Chemical vapor deposition; Contact resistance; Diodes; Electric resistance; Electrodes; Heterojunctions; Indium compounds; Indium gallium arsenide; Ohmic contacts;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.484118

Filename

484118