Title :
High-power, high-temperature operation of GaInAsSb-AlGaAsSb ridge-waveguide lasers emitting at 1.9 μm
Author :
Choi, H.K. ; Turner, G.W. ; Connors, M.K. ; Fox, S. ; Dauga, C. ; Dagenais, M.
Author_Institution :
Lincoln Lab., MIT, Lexington, MA, USA
fDate :
3/1/1995 12:00:00 AM
Abstract :
Ridge-waveguide lasers emitting at /spl sim/1.9 μm have been fabricated from a multiple-quantum-well heterostructure with an active region consisting of five GaInAsSb wells and six AlGaAsSb barriers. At room temperature, single-ended cw output power as high as 100 mW has been obtained. The maximum cw operating temperature is 130/spl deg/C, with a characteristic temperature of 85 K between 20 and 80/spl deg/C.
Keywords :
Debye temperature; III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; infrared sources; quantum well lasers; waveguide lasers; 1.9 mum; 100 mW; 130 C; 20 to 80 C; 85 K; AlGaAsSb barriers; GaInAsSb wells; GaInAsSb-AlGaAsSb; GaInAsSb-AlGaAsSb ridge-waveguide lasers; active region; characteristic temperature; high-power; high-temperature operation; maximum cw operating temperature; multiple-quantum-well heterostructure; room temperature; single-ended cw output power; Capacitive sensors; Gas lasers; Optical materials; Power generation; Pump lasers; Quantum well lasers; Substrates; Temperature; Threshold current; Waveguide lasers;
Journal_Title :
Photonics Technology Letters, IEEE
