DocumentCode :
754750
Title :
The effect of HF processing on gate oxide degradation in aggressive poly buffered LOCOS isolation
Author :
Cox, Kevin ; Chonko, Mark ; Honcik, Chris ; VanDyke, Shelly
Author_Institution :
Motorola Inc., Austin, TX, USA
Volume :
17
Issue :
2
fYear :
1996
Firstpage :
50
Lastpage :
52
Abstract :
We have investigated gate oxide degradation in metal-oxide semiconductor (MOS) devices associated with aggressive Poly Buffered Locos (PBL) isolation. Defects in the gate oxide resulting in severe degradation of charge-to-breakdown (Q/sub bd/) occurring at the interface between field oxide and active silicon have been shown to be a result of local Si surface roughness. Capacitor I-V data was used to quantify the Si roughness. It is shown that NH/sub 4/F-H/sub 2/O-HF (BOE) etchback chemistry provides significant improvement in gate oxide Q/sub bd/ for capacitors fabricated using PBL isolation. This Q/sub bd/ improvement is correlated to a decrease in Si roughness at the active silicon edge.
Keywords :
MOS capacitors; MOS integrated circuits; VLSI; dielectric thin films; electric breakdown; etching; integrated circuit technology; isolation technology; oxidation; silicon; surface topography; BOE etchback chemistry; HF processing; MOS devices; NH/sub 4/F-H/sub 2/O-HF; Si; aggressive poly buffered LOCOS isolation; capacitor I-V data; charge-to-breakdown; gate oxide degradation; local Si surface roughness; polysilicon; Chemistry; Curing; Degradation; Design for quality; Hafnium; MOS capacitors; MOS devices; Oxidation; Silicon; Wet etching;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/55.484120
Filename :
484120
Link To Document :
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