Title :
Mobility simulation of a novel Si/SiGe FET structure
Author :
Abramo, Antonio ; Bude, Jeff ; Venturi, Franco ; Pinto, Mark R.
Author_Institution :
Dept. of Electron., Bologna Univ., Italy
Abstract :
The theoretical study of a novel Si/SiGe structure combining the advantages of buried channel MOS devices and conventional SiGe FET´s is presented. A self-consistent one-dimensional Schrodinger-Poisson simulator has been developed to evaluate the gate dependence of electron effective mobility in the zero-field limit. Room temperature peak mobility values greater than 2800 cm/sup 2//Vs are predicted. The proposed structure shows also good turn-on characteristic and linear transconductance behavior, which represents a significant feature in view of possible technology applications.
Keywords :
Ge-Si alloys; MOSFET; electron mobility; elemental semiconductors; semiconductor device models; semiconductor materials; silicon; simulation; 1D Schrodinger-Poisson simulator; Si-SiO/sub 2/-SiGe-Si-SiGe; Si/SiGe FET structure; electron effective mobility; gate dependence; linear transconductance behavior; mobility simulation; room temperature peak mobility; turn-on characteristic; zero-field limit; Acoustic scattering; Electron mobility; FETs; Germanium silicon alloys; Optical scattering; Particle scattering; Rough surfaces; Silicon germanium; Surface roughness; Temperature;
Journal_Title :
Electron Device Letters, IEEE
