Title :
Effect of p-i-p+ buffer on characteristics of n-channel heterostructure field-effect transistors
Author :
Kanamori, Mikio ; Jensen, Geir U. ; Shur, Michael ; Lee, Kwyro
Author_Institution :
Dept. of Electr. Eng., Virginia Univ., Charlottesville, VA, USA
fDate :
2/1/1992 12:00:00 AM
Abstract :
The carrier concentration in heterostructure FETs (HFETs) with a p-i-p+ buffer is presented as a function of the gate bias, obtained by self-consistent one-dimensional calculation of 2-D electron density, subband levels, and electrostatic potential. These results quantify certain limitations on the range of geometrical and doping parameters and make it possible to optimize the HFET design and to compare modulation doped FET (MODFET) and doped channel HFET (DCHFET) structures. Monte Carlo simulations demonstrate that this p-i-p+ buffer drastically reduces the short-channel effects
Keywords :
Monte Carlo methods; field effect transistors; high electron mobility transistors; semiconductor device models; 2-D electron density; DCHFET; HFET; MODFET; Monte Carlo simulations; carrier concentration; characteristics; doped channel HFET; doping parameters; electrostatic potential; gate bias; geometrical parameters; heterostructure field-effect transistors; n-channel FETs; one-dimensional calculation; p-i-p+ buffer; short channel effects reduction; subband levels; Doping; Electrons; Epitaxial layers; FETs; Gallium arsenide; HEMTs; MODFETs; National electric code; Supercomputers; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
