A 60-GHz MMIC-compatible TED-oscillator

Author

Springer, A.L. ; Diskus, C.G. ; Lubke, K. ; Thim, H.W.

Author_Institution

Inst. Mikroelektrik, Johannes Kepler Univ., Linz, Austria

Volume

5

Issue

4

fYear

1995

fDate

4/1/1995 12:00:00 AM

Firstpage

114

Lastpage

116

Abstract

Experimental results achieved with planar GaAs transferred electron oscillators at V-band frequencies are reported in this contribution. The active devices are MESFET-like structures with a Schottky-gate controlling the electron injection into the drift region. The electron injection is adjusted to a level yielding a frequency independent negative differential resistance which is exploited for millimeter-wave power generation. The highest measured CW output power and efficiency are 6.72 mW and 1.3% at 60.33 GHz, respectively. These results are comparable to those obtained with transistor oscillators which are much more difficult to fabricate due to their extremely small dimensions in the 0.1 μm range.

Keywords

Gunn oscillators; III-V semiconductors; Schottky barriers; active networks; field effect MIMIC; gallium arsenide; millimetre wave oscillators; negative resistance devices; 1.3 percent; 6.72 mW; 60 to 60.33 GHz; EHF; GaAs; GaAs transferred electron oscillators; MESFET-like structures; MM-wave monolithic IC; MMIC-compatible TED-oscillator; Schottky-gate; V-band frequencies; drift region; electron injection; field effect controlled TED; frequency independent NDR; millimeter-wave power generation; negative differential resistance; Electrical resistance measurement; Electrons; Frequency; Gallium arsenide; MESFETs; Millimeter wave measurements; Millimeter wave transistors; Oscillators; Power generation; Power measurement;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.372809

Filename

372809