Title :
Low on-resistance GaN pin rectifiers grown on 6H-SiC substrates
Author :
Limb, J.B. ; Yoo, D. ; Ryou, J.-H. ; Shen, S.C. ; Dupuis, R.D.
Author_Institution :
Center for Compound Semicond., Georgia Inst. of Technol., Sch. Of Electr. And Comput. Eng., GA
Abstract :
Low on-resistance gallium nitride pin rectifiers grown by metal organic chemical vapour deposition on n-type 6H-SiC substrates are reported. The diode structures consist of an n+-GaN layer grown on the substrate, followed by a 2.5 mum unintentionally doped i-GaN layer, and a p-type GaN layer capped with a p++-GaN contact layer. The mesa-structure pin diodes exhibited a blocking voltage as large as Vr ~-500 V, at a reverse current density of Ir ~1 A/cm2. The on-resistance is 2.3 mOmega middot cm2 for an 80 mum mesa diameter circular device. This yields a power figure of merit value of 108.69 MW/cm2. The on-resistance and the figure of merit values are believed to be the best reported for vertical mesa-geometry GaN pin rectifiers grown on 6H-SiC substrates with comparable i-layer thickness
Keywords :
III-V semiconductors; MOCVD; gallium compounds; p-i-n diodes; semiconductor growth; silicon compounds; solid-state rectifiers; wide band gap semiconductors; 2.5 micron; 6H-SiC substrates; 80 micron; GaN; GaN pin rectifiers; diode structures; gallium nitride pin rectifiers; mesa-structure pin diodes; metal organic chemical vapour deposition; n+-GaN layer; p-type GaN layer; p++-GaN contact layer; reverse current density;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20070065
