Title :
Lasing characteristics of high-performance narrow-stripe InGaAs-GaAs quantum-well lasers confined by AlAs native oxide
Author :
Yong Cheng ; Dapkus, P.D. ; MacDougal, M.H. ; Gye Mo Yang
Author_Institution :
Dept. of Electr. Eng.-Electrophys., Univ. of Southern California, Los Angeles, CA, USA
Abstract :
High-performance narrow-stripe InGaAs-GaAs quantum-well lasers with integral buried AlAs native-oxide layers have been fabricated. AlAs native-oxide layers above and below waveguide region were employed for current and optical confinement to form narrow-stripe lasers. A low temperature (400/spl deg/C) anisotropic wet oxidation technique was used to selectively oxidize AlAs layers in the epitaxial structure. The devices demonstrated continuous wave threshold currents of 3.5 mA, external quantum efficiencies of 82%, and a characteristic temperature of 133 K for 1.8 μm-wide aperture, 400 μm-long devices. Threshold currents of 1.7 mA were obtained by applying HR/HR coatings.
Keywords :
Debye temperature; III-V semiconductors; gallium arsenide; indium compounds; optical films; oxidation; quantum well lasers; reflectivity; 1.7 mA; 1.8 mum; 133 K; 3.5 mA; 400 C; 400 mum; 82 percent; AlAs native oxide; AlAs native-oxide layers; HR coatings; InGaAs-GaAs; anisotropic wet oxidation technique; characteristic temperature; continuous wave threshold currents; epitaxial structure; external quantum efficiencies; high-performance narrow-stripe InGaAs-GaAs quantum-well lasers; integral buried; lasing characteristics; low temperature; native-oxide layers; selectively oxidize AlAs layers; threshold currents; waveguide region; Anisotropic magnetoresistance; Apertures; Geometrical optics; Optical waveguides; Oxidation; Potential well; Quantum well lasers; Temperature; Threshold current; Waveguide lasers;
Journal_Title :
Photonics Technology Letters, IEEE
