Two-dimensional analysis of the breakdown mechanism in the etched-groove silicon permeable base transistor

A two-dimensional, two-carrier simulation of a uniformly doped etched-groove permeable-base transistor which includes models for impact ionization and for Auger and Shockley-Read-Hall recombination is reported. It was found that for high current densities the breakdown voltage was reduced by channel avalanche. This mechanism was associated with a strong accumulation of electrons and holes in the source access region. In this region, the gate current remained low but the injection of electrons in the channel was enhanced, resulting in a degradation of the drain conductance and frequency performance