Title :
Facet reflectivity of a spot-size-converter integrated semiconductor optical amplifier
Author :
Shim, Jongin ; Kim, Jongryeol ; Jang, Donghoon ; Eo, Yungseon ; Arai, Shigehisa
Author_Institution :
Dept. of Electr. & Comput. Eng., Hanyang Univ., Kyungki, South Korea
fDate :
6/1/2002 12:00:00 AM
Abstract :
Traveling-wave type semiconductor optical amplifiers (SOAs) integrated with a spot-size-converter (SSC) are extensively studied for improvement of coupling efficiency with single-mode fibers and for cost reduction in packaging. In this paper, the structural dependence of the SSC on effective facet reflectivity Reff is investigated theoretically and experimentally. It is shown that, not only sufficient mode-conversion in the SSC region, but also the introduction of angled facets, are essential for reducing Reff. A small gain ripple (less than 0.1 dB) in an amplified spontaneous emission (ASE) spectrum, fiber-to-fiber gain of 26 dB, and saturation output power of 7 dBm are observed for the fabricated SOA, which consists of a window length of 20 μm, facet angle of 7°, and anti-reflection coated facet of less than 1% reflectivity
Keywords :
antireflection coatings; integrated optics; laser modes; optical fibre couplers; reflectivity; semiconductor optical amplifiers; superradiance; 20 micron; 26 dB; amplified spontaneous emission spectrum; angled facets; anti-reflection coated facet; facet angle; facet reflectivity; fiber-to-fiber gain; gain ripple; mode-conversion; packaging cost reduction; saturation output power; single-mode fiber coupling efficiency; spot-size-converter integrated semiconductor optical amplifier; structural dependence; traveling-wave type semiconductor optical amplifiers; window length; Coatings; Costs; Optical amplifiers; Optical fiber polarization; Optical films; Packaging; Power amplifiers; Power generation; Reflectivity; Semiconductor optical amplifiers;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.2002.1005417
