Calculated threshold currents of nitride- and phosphide-based quantum-well lasers

Author

Rees, P. ; Cooper, C. ; Smowton, P.M. ; Blood, P. ; Hegarty, J.

Author_Institution

Dept. of Phys., Trinity Coll., Dublin, Ireland

Volume

8

Issue

2

fYear

1996

Firstpage

197

Lastpage

199

Abstract

We have calculated the room temperature gain-current characteristics for a 360 nm wavelength, 80 /spl Aring/ GaN-Al/sub 0.14/Ga/sub 0.86/N and a red-emitting, 80 /spl Aring/ Ga/sub 0.51/In/sub 0.49/P-(Al/sub 0.44/Ga/sub 0.56/)/sub 0.51/In/sub 0.49/P quantum well laser structures, including many body effects. Although the carrier density and spontaneous current are much higher (by a factor of 4 and 3, respectively) in the nitride structures for a given local gain, the higher confinement factor at short wavelengths means the intrinsic threshold current of these devices is predicted to be approximately twice that of red lasers with the same optical loss.

Keywords

III-V semiconductors; aluminium compounds; carrier density; gallium compounds; indium compounds; laser beams; laser cavity resonators; optical losses; quantum well lasers; 298 K; 360 nm; 80 A; Ga/sub 0.51/In/sub 0.49/P(Al/sub 0.44/Ga/sub 0.56/)/sub 0.51/In/sub 0.49/P; Ga/sub 0.51/In/sub 0.49/P-(Al/sub 0.44/Ga/sub 0.56/)/sub 0.51/In/sub 0.49/P; GaN-Al/sub 0.14/Ga/sub 0.86/N; carrier density; confinement factor; intrinsic threshold current; local gain; many body effects; nitride structures; optical loss; quantum well laser structures; red lasers; room temperature gain-current characteristics; short wavelengths; spontaneous current; Blood; Charge carrier density; Gallium nitride; Optical devices; Optical materials; Quantum well lasers; Radiative recombination; Semiconductor materials; Spontaneous emission; Threshold current;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.484239

Filename

484239