• DocumentCode
    755559
  • Title

    Semiconductor spintronics

  • Author

    Akinaga, Hiro ; Ohno, Hideo

  • Author_Institution
    Nanotechnology Res. Inst., Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Ibaraki, Japan
  • Volume
    1
  • Issue
    1
  • fYear
    2002
  • fDate
    3/1/2002 12:00:00 AM
  • Firstpage
    19
  • Lastpage
    31
  • Abstract
    We review recent progress made in the field of semiconductor spintronics, a branch of semiconductor electronics where both charge and spin degrees of freedom play an important role in realizing unique functionalities. We first describe the new spin-dependent phenomena found in semiconductors including carrier-induced ferromagnetism in III-V compounds, followed by an account of our current understanding of such spin-dependent phenomena. Then we summarize the challenges the semiconductor spintronics has to meet in order for it to be a success as "electronics".
  • Keywords
    electron spin polarisation; ferromagnetic materials; magnetic multilayers; magnetic semiconductors; magneto-optical devices; magnetoresistive devices; reviews; semiconductor heterojunctions; spin dynamics; carrier-induced ferromagnetism; ferromagnetic semiconductors; magnetooptic devices; magnetoresistive devices; semiconductor electronics; semiconductor spintronics; spin coherence; spin degrees of freedom; Electrons; Helium; Integrated circuit technology; Magnetic semiconductors; Magnetoelectronics; Magnetooptic devices; Magnetoresistive devices; Materials science and technology; Nanostructured materials; Semiconductor materials;
  • fLanguage
    English
  • Journal_Title
    Nanotechnology, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1536-125X
  • Type

    jour

  • DOI
    10.1109/TNANO.2002.1005423
  • Filename
    1005423