Title :
Nanocrystal nonvolatile memory devices
Author_Institution :
Agere Syst., Murray Hill, NJ, USA
fDate :
3/1/2002 12:00:00 AM
Abstract :
In this paper we present an overview of nanocrystal memories - a nascent nonvolatile memory technology that promises to extend the scaling of more conventional charge storage devices to nanometer-scale dimensions
Keywords :
Coulomb blockade; aerosols; chemical vapour deposition; coagulation; ion implantation; nanostructured materials; nanotechnology; precipitation; semiconductor storage; semiconductor-insulator boundaries; silicon; tunnelling; vapour deposition; Coulomb blockade effects; LP-CVD; Si precipitation techniques; Si-rich oxide layers; SiO2-Si; aerosol deposition technique; chemical vapor deposition; data retention; direct growth technique; disturb behaviour; endurance; hemispherically shaped Si islands; ion implantation; low-pressure CVD; nanocrystal memories; nanocrystal-oxide interface; nanometer-scale dimensions; nonvolatile memory devices; nonvolatile memory technology; oxidation step; particle size distribution; polysilicon islands; threshold voltage window; tunnel oxide thickness scaling; Charge transfer; Dielectric devices; FETs; Flash memory; Manufacturing; Nanocrystals; Nanoscale devices; Nonvolatile memory; Semiconductor memory; Tunneling;
Journal_Title :
Nanotechnology, IEEE Transactions on
DOI :
10.1109/TNANO.2002.1005428
