High-gain and very sensitive photonic switching device by integration of heterojunction phototransistor and laser diode

Author

Noda, Susumu ; Takayama, Toru ; Shibata, Kimitaka ; Sasaki, Akio

Author_Institution

Dept. of Electr. Eng., Kyoto Univ., Japan

Volume

39

Issue

2

fYear

1992

fDate

2/1/1992 12:00:00 AM

Firstpage

305

Lastpage

312

Abstract

A photonic switching device with very large gain and high sensitivity has been developed by the vertical and direct integration of a heterojunction phototransistor and a laser diode. The device switches on with very low input power of ~10 nW and emits output power of ~4 mW under continuous-wave conditions at room temperature. The minimum energy for switching on is estimated to be as low as 80 fJ. The internal optical feedback of the device is quantitatively discussed to interpret the low-power operation for the switch-on

Keywords

integrated optoelectronics; optical switches; phototransistors; semiconductor junction lasers; 10 nW; 4 mW; 80 fJ; heterojunction phototransistor; high sensitivity; input power; integrated phototransistor/laser diode; internal optical feedback; large gain; laser diode; low-power operation; output power; photonic switching device; room temperature; switch on energy; Diode lasers; Heterojunctions; Optical bistability; Optical devices; Optical feedback; Optical sensors; Phototransistors; Power generation; Stimulated emission; Wet etching;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.121687

Filename

121687