Two-dimensional analysis of a BiNMOS transistor operating at 77 K using a modified PISCES program

Author

Chen, Yen-Wen ; Kuo, James B.

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

Volume

39

Issue

2

fYear

1992

fDate

2/1/1992 12:00:00 AM

Firstpage

348

Lastpage

355

Abstract

The authors present a detailed two-dimensional numerical simulation study on the steady-state and turn-on transient behavior of a BiNMOS device operating at 77 K using PISCES-2B with modified low-temperature models. It is shown that the switching speed of the BiNMOS device, which is designed for operation at room temperature, is degraded for low-temperature operation. The BiNMOS device structure and the low-temperature device models for the two-dimensional (2D) device simulator are described, following by the steady-state and the transient analysis of the BiNMOS device. The turn-on transient performance of the BiNMOS device shows that, at 77 K, the switching time, which is determined by the load-related delay and the intrinsic delay of the bipolar device, increases about 45% from its 300 K value for an output load of 0.1 pF/μm

Keywords

bipolar transistors; digital simulation; electronic engineering computing; insulated gate field effect transistors; semiconductor device models; 2D modelling; 77 K; BiNMOS transistor; PISCES program; PISCES-2B; intrinsic delay; load-related delay; low-temperature models; low-temperature operation; output load; steady state behavior; switching speed; switching time; transient analysis; turn-on transient behavior; two-dimensional numerical simulation study; BiCMOS integrated circuits; CMOS technology; Degradation; Delay effects; MOS devices; Performance gain; Steady-state; Subthreshold current; Transient analysis; Very large scale integration;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.121693

Filename

121693