A semi-empirical model of surface scattering for Monte Carlo simulation of silicon n-MOSFETs

Author

Sangiorgi, Enrico ; Pinto, Mark R.

Author_Institution

Dept. of Phys., Udine Univ., Italy

Volume

39

Issue

2

fYear

1992

fDate

2/1/1992 12:00:00 AM

Firstpage

356

Lastpage

361

Abstract

A semi-empirical model of surface scattering for Monte Carlo simulation of electrons in the silicon inversion layer at 300 K is proposed. The model compares favorably with different sets of experimental electron effective mobility data over a wide range of normal electric fields, channel impurity concentrations, and substrate bias. Comparisons between Monte Carlo and drift-diffusion simulations show that the model is able to correctly predict the device termination currents in the regime where nonequilibrium transport effects are negligible. It is expected therefore that at small device lengths the Monte Carlo predictions are also quantitatively correct

Keywords

Monte Carlo methods; carrier mobility; insulated gate field effect transistors; inversion layers; semiconductor device models; 300 K; Monte Carlo predictions; Monte Carlo simulation; Si; channel impurity concentrations; device termination currents; drift-diffusion simulations; inversion layer; n-MOSFETs; nonequilibrium transport effects; normal electric fields; semi-empirical model; small device lengths; substrate bias; surface scattering; surface scattering model; Electron mobility; Impurities; MOSFET circuits; Monte Carlo methods; Predictive models; Rough surfaces; Scattering; Silicon; Substrates; Surface roughness;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.121694

Filename

121694