Title :
Measurement of contact resistance distribution using a 4k-contacts array
Author :
Hamamoto, Takeshi ; Ozaki, Tohru ; Aoki, Masami ; Ishibashi, Yutaka
Author_Institution :
ULSI Res. Labs., Toshiba Corp., Kawasaki, Japan
fDate :
2/1/1996 12:00:00 AM
Abstract :
A new test structure suitable for measuring a contact resistance distribution has been developed. It includes the following two components: a 256 row, 16 column (= 4096) four-terminal cross-contact array; and peripheral circuits, which consist of an eight-stage CMOS binary counter and 256-bit CMOS decoders. It was found that contact resistance can be fitted by a Gaussian distribution for more than three standard deviations of the mean value. The relationship between the contact size and the standard deviation of the contact resistance has been discussed for two types of contacts: Al/TiN/TiSi2-n+Si, and WSi2/poly-n+Si. This test structure can simultaneously measure the series resistance of a two-terminal contact chain and the individual contact resistance. By comparing the results of the two measurement modes, it was found that there are three kinds of contact resistance distribution in the chips which have high series resistance of the two-terminal contact chain
Keywords :
Gaussian distribution; arrays; contact resistance; electric resistance measurement; 256 bit; Al-TiN-TiSi2-Si; Al/TiN/TiSi2-n+Si contact; CMOS binary counter; CMOS decoders; Gaussian distribution; WSi2-Si; WSi2/poly-n+Si contact; contact resistance distribution; four-terminal cross-contact array; measurement; series resistance; test structure; two-terminal contact chain; Circuit testing; Contact resistance; Counting circuits; Decoding; Electrical resistance measurement; Gaussian distribution; Measurement standards; Semiconductor device measurement; Size measurement; Tin;
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on