Title :
Monte Carlo simulation of arsenic ion implantation in (100) single-crystal silicon
Author :
Yang, Shyh-Horng ; Morris, Steven J. ; Tian, Shiyang ; Parab, Krishnakumar B. ; Tasch, Al F., Jr.
Author_Institution :
PRC/MER, Texas Univ., Austin, TX, USA
fDate :
2/1/1996 12:00:00 AM
Abstract :
In this paper is reported a new physically based Monte Carlo model and simulator for accurate simulation of arsenic ion implantation in (100) single-crystal silicon. A new damage generation model and an improved electronic stopping power model have been developed. These new physically based models greatly improve the capability for predicting arsenic as-implanted profiles. This new Monte Carlo model predicts very well the detailed profile dependence on the implant tilt and rotation angles as well as on the implant dose and energy over the energy range 15-180 keV
Keywords :
Monte Carlo methods; arsenic; doping profiles; elemental semiconductors; energy loss of particles; ion implantation; semiconductor process modelling; silicon; (100) single-crystal Si; 15 to 180 keV; Monte Carlo simulation; Si:As; UT-MARLOWE; as-implanted profiles; damage generation model; electronic stopping power model; implant dose dependence; implant energy; implant rotation angle; implant tilt angle; ion implantation; physically based Monte Carlo model; Crystallization; Doping profiles; Implants; Ion implantation; Monte Carlo methods; Power generation; Predictive models; Rapid thermal processing; Semiconductor process modeling; Silicon;
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
