Title :
High-performance in W-band monolithic pseudomorphic InGaAs HEMT LNA´s and design/analysis methodology
Author :
Wang, Huei ; Dow, Gee Samuel ; Allen, Barry R. ; Ton, Thuy-Nhung ; Tan, Kin L. ; Chang, Kwo Wei ; Chen, Tzu-hung ; Berenz, John ; Lin, T. Shyan ; Liu, Po-Hsin ; Streit, Dwight C. ; Bui, Stacey B. ; Raggio, Jeffrey J. ; Chow, P. Daniel
Author_Institution :
TRW, Redondo Beach, CA, USA
fDate :
3/1/1992 12:00:00 AM
Abstract :
High-performance W-band monolithic one- and two-stage low noise amplifiers (LNAs) based on pseudomorphic InGaAs-GaAs HEMT devices have been developed. The one-stage amplifier has a measured noise figure of 5.1 dB with an associated gain of 7 dB from 92 to 95 GHz, and the two-stage amplifier has a measured small signal gain of 13.3 dB at 94 GHz and 17 dB at 89 GHz with a noise figure of 5.5 dB from 91 to 95 GHz. An eight-stage LNA built by cascading four of these monolithic two-stage LNA chips demonstrates 49 dB gain and 6.5 dB noise figure at 94 GHz. A rigorous analysis procedure was incorporated in the design, including accurate active device modeling and full-wave EM analysis of passive structures. The first pass success of these LNA chip designs indicates the importance of a rigorous design/analysis methodology in millimeter-wave monolithic IC development
Keywords :
III-V semiconductors; MMIC; equivalent circuits; field effect integrated circuits; gallium arsenide; high electron mobility transistors; indium compounds; microwave amplifiers; network analysis; network synthesis; semiconductor device models; 5.1 to 6.5 dB; 7 to 49 dB; 89 to 95 GHz; EHF; HEMT devices; InGaAs-GaAs; MIMIC; MM-wave IC; W-band; active device modeling; design/analysis methodology; eight-stage LNA; full-wave EM analysis; low noise amplifiers; millimeter-wave monolithic IC; monolithic two-stage LNA chips; one-stage amplifier; pseudomorphic device; Chip scale packaging; Design methodology; Gain measurement; HEMTs; Low-noise amplifiers; Millimeter wave technology; Monolithic integrated circuits; Noise figure; Noise measurement; Semiconductor device measurement;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
