• DocumentCode
    75598
  • Title

    Monolithic 1\\times 2 MMI-Based 25-Gb/s SOI DPSK Demodulator Integrated With SiGe Photodetector

  • Author

    Hai, Mohammed Shafiqul ; Nazmus Sakib, Meer ; Liboiron-Ladouceur, Odile

  • Author_Institution
    Dept. of Electr. & Comput. Eng., McGill Univ., Montréal, QC, Canada
  • Volume
    27
  • Issue
    6
  • fYear
    2015
  • fDate
    March15, 15 2015
  • Firstpage
    565
  • Lastpage
    568
  • Abstract
    In this letter, the performance of a 25-Gb/s 1 × 2 multimode interference (MMI) coupler-based monolithic differential phase shift keying (DPSK) receiver integrated with Germanium (Ge) on silicon-on-insulator (SOI) photodetector (PD) is presented. Theoretical analysis suggests that the device exhibits more uniform extinction ratio over the C-band compared with a DPSK demodulator based on 2×2 MMI coupler. Electrical scattering parameters (S-parameters) investigated through component level simulation comparing the fabrication tolerance shows power penalty of 1.2 and 5 dB for unbalanced and balanced detection DPSK receiver, respectively. The SOI 1×2 MMI coupler-based unbalanced DPSK receiver has a sensitivity of 0.41 dBm at a bit error rate of 1×10-9 without postelectrical amplification. The PD integrated single-end detectionbased receiver has a total footprint area of 0.39 mm2.
  • Keywords
    S-parameters; demodulators; differential phase shift keying; error statistics; integrated optics; integrated optoelectronics; optical couplers; optical fabrication; optical modulation; optical receivers; photodetectors; silicon compounds; silicon-on-insulator; C-band; Germanium on silicon-on-insulator photodetector; PD integrated single-end detection based receiver; S-parameters; SOI MMI coupler-based unbalanced DPSK receiver; SiGe photodetector; balanced detection DPSK receiver; bit error rate; bit rate 25 Gbit/s; component level simulation; electrical scattering parameters; fabrication tolerance; monolithic MMI-based SOI DPSK demodulator; multimode interference coupler-based monolithic differential phase shift keying receiver; postelectrical amplification; power penalty; theoretical analysis; uniform extinction ratio; Bit error rate; Couplers; Delays; Demodulation; Differential phase shift keying; Extinction ratio; Receivers; Monolithic integrated circuits; multimode interference coupler; photodetectors; silicon-on-insulator (SOI);
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/LPT.2014.2377176
  • Filename
    6975059