A model for analyzing the interface properties of a semiconductor-insulator-semiconductor structure. I. Capacitance and conductance techniques

Author

Chen, Hung-Sheng ; Li, Sheng S.

Author_Institution

Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA

Volume

39

Issue

7

fYear

1992

fDate

7/1/1992 12:00:00 AM

Firstpage

1740

Lastpage

1746

Abstract

A model is presented for analyzing the interface properties of a semiconductor-insulator-semiconductor (SIS) capacitor structure. By introducing a coupling factor, conventional metal-oxide-semiconductor (MOS) capacitor theory is extended to analyze the interface properties of the film/buried-oxide/substrate interfaces of a silicon-on-insulator (SOI) material. This model was used to determine parameters such as doping concentration, buried oxide thickness, fixed oxide charge, and interface trap density from the SIMOX (separation by implantation of oxygen) based SIS capacitors

Keywords

doping profiles; electron traps; semiconductor-insulator boundaries; semiconductor-insulator-semiconductor structures; SIMOX; buried oxide thickness; capacitance techniques; conductance techniques; coupling factor; doping concentration; film/buried-oxide/substrate interfaces; fixed oxide charge; interface properties; interface trap density; semiconductor-insulator-semiconductor structure; Capacitance measurement; Conductive films; Density measurement; Doping; Equivalent circuits; MOS capacitors; Semiconductor films; Semiconductor process modeling; Silicon on insulator technology; Substrates;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.141241

Filename

141241