Heavy ion induced snapback in CMOS devices

Author

Koga, R. ; Kolasinski, W.A.

Author_Institution

Aerosp. Corp., El Segundo, CA, USA

Volume

36

Issue

6

fYear

1989

fDate

12/1/1989 12:00:00 AM

Firstpage

2367

Lastpage

2374

Abstract

Single-event-snapback (SES) susceptibilities of selected CMOS devices to heavy ions were measured using N, Ne, Ar, Cu, and Kr ion beams. Like latchup, snapback was observed macroscopically by detecting the abnormally high bias current condition. However, the snapback susceptibility characteristics differed from those of latchup, and consequently it was possible to measure the snapback responses unambiguously. The responses are expressed in terms of the cross section for varying bias and stopping power of ions. Test data indicate that CMOS devices with rather long channel lengths (on the order of 3 μm) are free from SES when operated at about 5 V. However, current theories predict that this regenerative breakdown mode of upset may become very important at 5 V or below for devices with extremely short n-channel lengths

Keywords

CMOS integrated circuits; environmental testing; integrated circuit technology; integrated circuit testing; ion beam effects; radiation hardening (electronics); semiconductor device models; 5 V; Ar ion beams; CMOS devices; Cu ion beams; Kr ion beams; N ion beams; Ne ion beams; abnormally high bias current condition; bias; cross section; heavy ion induced snapback; long channel lengths; regenerative breakdown mode; short n-channel lengths; single event snapback; snapback susceptibility characteristics; stopping power of ions; Avalanche breakdown; Circuits; Inverters; Laboratories; MOSFETs; Manufacturing; Power supplies; Testing; Thyristors; Voltage;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.45450

Filename

45450