A model for analyzing the interface properties of a semiconductor-insulator-semiconductor structure. II. Transient capacitance technique

Author

Chen, Hung-Sheng ; Li, Sheng S.

Author_Institution

Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA

Volume

39

Issue

7

fYear

1992

fDate

7/1/1992 12:00:00 AM

Firstpage

1747

Lastpage

1751

Abstract

For pt.I see ibid., vol.39, no.7, p.1740-46 (1992). A bias-scan deep-level transient spectroscopy (DLTS) method for measuring interface states in a semiconductor-insulator-semiconductor (SIS) capacitor structure is described. Introducing a charge coupling factor between the film/oxide (F/O) and the substrate/oxide (S/O) interfaces made it possible to extract interface trap densities from the measured transient signals. This technique was used to determine the interface trap densities and capture cross sections at both the F/O and S/O interfaces of SIMOX (separation by implantation of oxygen) based SIS capacitors

Keywords

capacitors; deep level transient spectroscopy; electron traps; interface electron states; semiconductor device models; semiconductor device testing; semiconductor-insulator boundaries; semiconductor-insulator-semiconductor structures; SIMOX; SIS capacitor structure; bias-scan DLTS; capture cross sections; charge coupling factor; deep-level transient spectroscopy; film/oxide interface; interface properties; interface states; interface trap densities; semiconductor-insulator-semiconductor structure; substrate/oxide interface; transient capacitance technique; transient signals; Capacitance; Capacitors; Conductive films; Energy capture; Filling; Interface states; Semiconductor films; Silicon; Substrates; Temperature;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.141242

Filename

141242