DocumentCode
756133
Title
Effect of inhomogeneous line broadening on gain and differential gain of quantum dot lasers
Author
Qasaimeh, Omar
Author_Institution
Dept. of Electr. Eng., Jordan Univ. of Sci. & Technol., Irbid, Jordan
Volume
50
Issue
7
fYear
2003
fDate
7/1/2003 12:00:00 AM
Firstpage
1575
Lastpage
1581
Abstract
Detailed theoretical analysis of the size fluctuation in InAs-GaAs quantum dot (QD) lasers is presented. Analytical expressions for the inhomogeneous line broadening and the optical gain are derived for a Gaussian size fluctuation distribution. The effect of size fluctuations on the QD carrier density, modal gain, and differential gain is studied. Red shifts in the gain peak is observed when size fluctuations increases. The energy detuning between the gain peak and the differential gain peak for a pyramidal quantum dot system having an average base length of 130 Å and standard deviation of 7 Å is about 12 meV.
Keywords
Gaussian distribution; III-V semiconductors; carrier density; gallium arsenide; indium compounds; laser theory; quantum dot lasers; spectral line broadening; Gaussian distribution; InAs-GaAs; InAs-GaAs quantum dot laser; carrier density; differential gain; energy detuning; inhomogeneous line broadening; modal gain; optical gain; red shift; size fluctuation; Chemical lasers; Fluctuations; Laser modes; Laser theory; Laser tuning; Optical saturation; Quantum dot lasers; Quantum mechanics; Semiconductor lasers; US Department of Transportation;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2003.813907
Filename
1217239
Link To Document