• DocumentCode
    756133
  • Title

    Effect of inhomogeneous line broadening on gain and differential gain of quantum dot lasers

  • Author

    Qasaimeh, Omar

  • Author_Institution
    Dept. of Electr. Eng., Jordan Univ. of Sci. & Technol., Irbid, Jordan
  • Volume
    50
  • Issue
    7
  • fYear
    2003
  • fDate
    7/1/2003 12:00:00 AM
  • Firstpage
    1575
  • Lastpage
    1581
  • Abstract
    Detailed theoretical analysis of the size fluctuation in InAs-GaAs quantum dot (QD) lasers is presented. Analytical expressions for the inhomogeneous line broadening and the optical gain are derived for a Gaussian size fluctuation distribution. The effect of size fluctuations on the QD carrier density, modal gain, and differential gain is studied. Red shifts in the gain peak is observed when size fluctuations increases. The energy detuning between the gain peak and the differential gain peak for a pyramidal quantum dot system having an average base length of 130 Å and standard deviation of 7 Å is about 12 meV.
  • Keywords
    Gaussian distribution; III-V semiconductors; carrier density; gallium arsenide; indium compounds; laser theory; quantum dot lasers; spectral line broadening; Gaussian distribution; InAs-GaAs; InAs-GaAs quantum dot laser; carrier density; differential gain; energy detuning; inhomogeneous line broadening; modal gain; optical gain; red shift; size fluctuation; Chemical lasers; Fluctuations; Laser modes; Laser theory; Laser tuning; Optical saturation; Quantum dot lasers; Quantum mechanics; Semiconductor lasers; US Department of Transportation;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2003.813907
  • Filename
    1217239